| PART |
Description |
Maker |
| HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns
1,048,576-word x 4-bit dynamic random access memory, 60ns
1/048/576-word X 4-bit Dynamic Random Access Memory
1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|
| KM41256AJ-12 KM41257AJ-12 KM41256AJ-10 KM41257AJ-1 |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode 256K × 1位动态随机存储器与页/半字节模
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HM514800LJP-7 HM514800LJP-10 HM514800LZP-10 HM5148 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
100ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
| MCM4116B MCM4116 |
16,384 BIT DYNAMIC RANDOM ACCESS MEMORY
|
Motorola, Inc
|
| HM5118165BTT-8 HM5118165B HM5118165BJ-6 HM5118165B |
1048576-word x 16-bit Dynamic Random Access Memory
|
HITACHI[Hitachi Semiconductor]
|
| NTE21256 |
262,144-Bit Dynamic Random Access Memory (DRAM)
|
NTE[NTE Electronics]
|
| HM514170C HM514170CJ-7 HM514170CLJ-7 HM514170CLJ-8 |
262,144-word x 16-bit Dynamic Random Access Memory
|
Hitachi Semiconductor
|
| AK59256AG AK59256AS |
262,144 Word by 9 bit, CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK536512Z |
524,288 Word by 36 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK591024AG AK591024AGP AK591024AS AK591024ASP AK59 |
1,048,576 Word X 9 bit, CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
http://
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